US6T8
Complex Transistor(BIP+BIP)
US6T8
Complex Transistor(BIP+BIP)
在超小型封装中内藏2个晶体管。适用于从差动增幅回路到高频水晶振动器，起动器等各种用途。
主要规格
特性：
Package Code
SOT-363T
JEITA Package
SC-113DA
Number of terminal
6
Polarity
PNP+PNP
Collector-Emitter voltage VCEO1[V]
-12
Collector current Io(Ic) [A]
-1.5
Collector-Emitter voltage VCEO2[V]
-12
Collector current(continuous) IC2[A]
-1.5
hFE
270 to 680
hFE (Min.)
270
hFE (Max.)
680
Mounting Style
Surface mount
Equivalent (Single Part)
2SB1709 / 2SB1709
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
2.0x2.1 (t=0.85)
