R6004ENJ
10V驱动型 Nch MOSFET
R6004ENJ
10V驱动型 Nch MOSFET
场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容，可满足多样的市场需求。
主要规格
特性：
Package Code
TO-263 (D2PAK)
JEITA Package
SC-83
Applications
Power Supply
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
600
Drain Current ID[A]
4
RDS(on)[Ω] VGS=10V(Typ)
0.9
RDS(on)[Ω] VGS=Drive (Typ)
0.9
Total gate charge Qg[nC]
15
Power Dissipation (PD)[W]
40
Drive Voltage[V]
10
Trr (Typ)[ns]
320
Mounting Style
Surface mount
Bare Die Part Number
Available: K7411
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
10.1x13.1 (t=4.7)
特点：
- Low on-resistance
- Fast switching speed
- Gate-source voltage (VGSS) guaranteed to be ±20V
- Drive circuits can be simple
- Parallel use is easy
- Pb-free lead plating ; RoHS compliant
