R6530ENZ
低噪声规格 Nch 650V 30A 功率MOSFET
R6530ENZ
低噪声规格 Nch 650V 30A 功率MOSFET
R6xxxENx系列是重视易用性，以低噪声性能为特点的Super Junction MOSFET产品。该系列产品可在音响和照明等需要尽可能抑制噪声的应用中实现高性能。
主要规格
特性：
Package Code
TO-3PF
Applications
Power Supply
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
650
Drain Current ID[A]
30
RDS(on)[Ω] VGS=10V(Typ)
0.125
RDS(on)[Ω] VGS=Drive (Typ)
0.125
Total gate charge Qg[nC]
90
Power Dissipation (PD)[W]
86
Drive Voltage[V]
10
Trr (Typ)[ns]
640
Mounting Style
Leaded type
Bare Die Part Number
Available: K7457
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
15.5x26.5 (t=5.7)
特点：
- Low on-resistance
- Fast switching speed
- Parallel use is easy
- Pb-free plating ; RoHS compliant
