ROHM Product Detail
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- MOSFET
- 12-150V MOSFET
- 单N沟道MOSFET
- RJ1P12BBD
新设计非推荐
RJ1P12BBD
Nch 100V 120A 功率MOSFET
新设计非推荐
RJ1P12BBD
Nch 100V 120A 功率MOSFET
为支持现有客户而生产的产品。不对新设计出售此产品。
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主要规格
RJ1P12BBD 的替换产品
Part Number |
|
|
|
---|---|---|---|
Ordering Part Number | RJ1P12BBDTLL | RJ1P10BBHTL1 | RS6P100BHTB1 |
Similar Level | - | Same Pinout | Similar Specification |
Data Sheet | |||
Supply Status | Not Recommended for New Designs | Recommended | Recommended |
Package | LPTL | TO-263AB-3LSHYAD | HSOP8 (Single,TB1) |
Unit Quantity | 1000 | 800 | 2500 |
Minimum Packing Quantity | 1000 | 800 | 2500 |
Packing Type | Taping | Taping | Taping |
RoHS | Yes | Yes | Yes |
Package Code | TO-263AB | TO-263AB | HSOP8S (5x6) |
Package Size [mm] | 10.1x10.1 (t=4.7) | 8.7×10.11 (t=4.77) | 6.0x4.9 (t=1.1) |
Number of terminal | 3 | 3 | 8 |
Polarity | Nch | Nch | Nch |
V DSS [V] | 100 | 100 | 100 |
I D [A] | 120.0 | 170.0 | 100.0 |
R DS(on) (Typ) @6V[Ω] | - | 0.0028 | 0.0058 |
R DS(on) (Typ) @10V[Ω] | 0.0044 | 0.0023 | 0.0045 |
R DS(on) (Typ) @Drive[Ω] | 0.0052 | 0.0028 | 0.0058 |
Drive Voltage [V] | 6.0 | 6.0 | 6.0 |
Power Dissipation (PD) [W] | 178.0 | 189.0 | 104.0 |
Q g (Typ)[nC] | 51.0 | 89.0 | 29.0 |
Trr (Typ)[ns] | - | 90 | 63 |
Mounting Style | Surface mount | Surface mount | Surface mount |
Applications | - | Switching | - |
Storage Temperature (Min)[℃] | -55 | -55 | -55 |
Storage Temperature (Max)[℃] | 150 | 150 | 150 |
Videos & Catalogs
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产品视频一览
低导通电阻 Nch 功率MOSFET(铜夹片型) RS6/RH6系列
2023-04-14 00:00:00.0
( 1:56 )
新产品通过采用罗姆新一代微细工艺结构的元件,显著降低了单位面积的导通电阻。
新产品通过采用罗姆新一代微细工艺结构的元件,显著降低了单位面积的导通电阻。
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